Die Vorlesung führt ein in die Grundlagen moderner optoelektronischer Materialien, Bauelemente und Systeme. Aufbauend auf den Grundlagen der Halbleiterphysik und den etablierten Herstellungsverfahren wird die Funktionsweise von Bauelemente wie Dioden, Detektoren, Halbleiterleuchtdioden und Halbleiterlaser sowie unterschiedliche Transistortypen behandelt.
Content of the course:
Light matter interactions
Physical basics
Electronic and optical properties of semiconductors (organic and inorganic materials)
Semiconductor heterostructures (with quantum confinement)
Thin film deposition systems (PVD, CVD,..)
Photodetectors and solar cells
LED and Lasers
Nanophotonics, plasmonics, metamaterials, and emerging optoelectronic materials
Transistors (state of the art, novel device structures (with electrolytic gate) and new power devices (e.g. insolated gate bipolar transistor)
Frequency | Weekday | Time | Format / Place | Period | |
---|---|---|---|---|---|
weekly | Mi | 16-18 | D4-258 | 17.10.2016-10.02.2017 | |
weekly | Do | 16-18 | D4-258 | 17.10.2016-10.02.2017 |
Module | Course | Requirements | |
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28-M-EP Experimentalphysik | Experimentalphysik (A) | Graded examination
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Student information |
28-M-VBN Vertiefung | Vertiefung (A.1) | Graded examination
|
Student information |
28-M-VP Vertiefung | Vertiefung (A.1) | Graded examination
|
Student information |
The binding module descriptions contain further information, including specifications on the "types of assignments" students need to complete. In cases where a module description mentions more than one kind of assignment, the respective member of the teaching staff will decide which task(s) they assign the students.